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IRF511, N-Channel Power MOSFETs -
Mosfet, Power; N-ch; Vdss 100V; Rds(on) 44MILLIOHMS; Id 33A; TO-220AB; Pd 130W; -55DEG -
13N20D, N CHANNEL MOSFET, 200V, 13A, D-PAK
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ICD,SMT,128K X 8 SRAM
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81, LATTICE, In-System Programmable Analog Cir, 16-pin SOIC
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BTA16-600B, TRIAC, TO-220
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61228, TRANS, METAL CAN
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ISOLATOR/SPLITTER>42DB
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M38510, IC FLAT PACK
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M38510/05503BEA, DIGITAL, CMOS, BUFFER/CONVERTER, MIL SPEC
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IC FLAT PACK, TEST DOT, ORIGINAL CARRIERS DC: 8805
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RELAY, AROMAT, 250V AC
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Oscillator, +2.5 V, 5.0 x 3.2 x 1.2 mm, 4 pads, 25.000 MHz
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Oscillator, +3.3 V, 3.2 x 2.5 x 1.0 mm, 4 pads, 25.000 MHz
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Oscillator, +3.3 V, 5.0 x 3.2 x 1.2 mm, 4 pads, 27.000 MHz
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Oscillator, +3.3 V, 5.0 x 7.0 x 1.8 mm, 6 pads, 159.375 MHz
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Oscillator, +3.3 V, 5.0 x 7.0 x 1.4 mm, 4 pads, 125.000 MHz
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Oscillator, +3.3 V, 5.0 x 7.0 x 1.4 mm, 4 pads, 35.328 MHz
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Oscillator, +3.3 V, 5.0 x 7.0 x 1.4 mm, 4 pads, 8.192 MHz
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Oscillator, +3.3 V, 5.0 x 7.0 x 1.4 mm, 4 pads, 60.000 MHz
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Oscillator, +3.3 V, 5.0 x 7.0 x 1.4 mm, 4 pads, 8.000 MHz
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Oscillator, +5.0 V, 12.8 x 20.2 x 5.08 mm, 4 pin DIP, 10.000 MHz
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Oscillator, +5.0 V, 12.8 x 20.2 x 5.08 mm, 4 pin DIP, 4.096 MHz
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Oscillator, +5.0 V, 9.6 x 11.4 x 3.0 mm, 4 pads, 6.000 MHz