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HN462532G, 4K x 8 nMOS EPROM Memory -
O-13.6000M, OSC 13.6M TTL
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O-108.000MHZ
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O-16.0000M, OSC 16.0M TTL/HCMOS 100
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CAP, 1uF 160V RAD AE 20%
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CAP, 100uF 250V RAD AE 20%
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HEADER, 4 PIN, .025 POST, GOLD FLASH PLATE, BLA INSUL
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IMP, PLCC DBE1200
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28 PIN SOCKET, ROBINSON ELECTRONICS
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7200L50TP, FIFO MEM 256X9, 28 PIN DIP
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IRF511, N-Channel Power MOSFETs
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13N20D, N CHANNEL MOSFET, 200V, 13A, D-PAK
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Oscillator, +2.5 V, 3.2 x 2.5 x 1.0 mm, 4 pads, 25.000 MHz
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Oscillator, +3.3 V, 3.2 x 2.5 x 1.0 mm, 4 pads, 26.600 MHz
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Oscillator, +3.3 V, 5.0 x 3.2 x 1.2 mm, 4 pads, 50.000 MHz
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Oscillator, +3.3 V, 5.0 x 7.0 x 1.8 mm, 6 pads, 106.250 MHz
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Oscillator, +3.3 V, 5.0 x 7.0 x 1.4 mm, 4 pads, 12.000 MHz
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Oscillator, +3.3 V, 5.0 x 7.0 x 1.4 mm, 4 pads, 33.333 MHz
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Oscillator, +3.3 V, 5.0 x 7.0 x 1.4 mm, 4 pads, 8.000 MHz
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Oscillator, +3.3 V, 5.0 x 7.0 x 1.4 mm, 4 pads, 50.000 MHz
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Oscillator, +3.3 V, 5.0 x 7.0 x 1.4 mm, 4 pads, 66.000 MHz
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Oscillator, +5.0 V, 12.8 x 20.2 x 5.08 mm, 4 pin DIP, 1.8432 MHz
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Oscillator, +5.0 V, 12.8 x 20.2 x 5.08 mm, 4 pin DIP, 32.000 MHz
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Oscillator, +5.0 V, 9.6 x 11.4 x 3.0 mm, 4 pads, 44.2368 MHz