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HN462532G, 4K x 8 nMOS EPROM Memory -
O-13.6000M, OSC 13.6M TTL
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O-108.000MHZ
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O-16.0000M, OSC 16.0M TTL/HCMOS 100
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CAP, 1uF 160V RAD AE 20%
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CAP, 100uF 250V RAD AE 20%
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HEADER, 4 PIN, .025 POST, GOLD FLASH PLATE, BLA INSUL
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IMP, PLCC DBE1200
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28 PIN SOCKET, ROBINSON ELECTRONICS
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7200L50TP, FIFO MEM 256X9, 28 PIN DIP
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IRF511, N-Channel Power MOSFETs
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13N20D, N CHANNEL MOSFET, 200V, 13A, D-PAK
